TEM Smaple Preparation using Triple Beam System
Abstract: For obtaining useful information from TEM observations, both the performance of the TEM system and the sample preparation technique are important. The preparation process for a high-definition TEM sample must include high precision sample positioning and a cleaning process of the damage layer formed by FIB.
FIB has been used for TEM sample preparation, because it can determine accurately the position from where a TEM lamella is picked up. As an alternative, argon ion milling has also been used for sample preparation causing less damage.
These two systems (argon ion-beam system and FIB) and SEM are combined, forming the ‘triple-beam system’. In this system, all beams are orientated to the same point at which the sample is placed on. Because of this arrangement, in-situ SEM monitoring can be performed during FIB and Argon processing.
Using the triple-beam system, both very high precision and low damage finishing of the sample can be achieved. A TEM sample preparation case of an actual semiconductor device is introduced in this paper. This case illustrates the effectiveness of the triple-beam system.
Key Words: TEM sample preparation, Argon ion beam, damage layer