Measurement of Local Dielectric Function of LSIs Using TEM-EELS

Yoshihiro Anan, Masanari Koguchi, Kyoichiro Asayama, Koji Kimoto and Yoshio Matsui

Abstract: Low-k film has been adapted to LSI interconnects, although process-induced damage is still a serious problem. A technique to measure dielectric properties at nanometer-scale spatial resolution is required to improve device processes. Electron energy-loss spectroscopy with a transmission electron microscope (TEM-EELS) is a well-known technique to measure dielectric properties at nanometer-scale spatial resolution. It has previously only been applied to measure materials whose refraction factor was known. In this study, we developed a measurement technique using TEM-EELS that can be applied to a damaged layer in low-k material.

Key words: Transmission electron microscope, Electron energy loss spectroscopy, Dielectric function, Low-k film