UV-Raman observation of Si surface layer with very shallow ion-implantation
Abstract: Shallow junction technology within depth of a few tens of nm plays a key role in recent Si-based devices of high integration. This paper reports Raman scattering studies of lattice damages induced by shallow ion implantation and recovery by thermal treatment. Penetration depth of the probe laser is greatly different between visible and UV lasers: for example, a deep UV laser at wavelength 266 nm can probe surface layers of Si with depth ～5 nm. We can make a thorough analysis of Si top layers by cooperating with TEM cross-sectional observation.
Key words: nm-surface, UV Raman, silicon, ion implantation, thermal treatment